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insulated gate bipolar transistor with ultrafast soft recovery diode features 4/14/04 ? low vce (on) non punch through igbt technology. low diode vf. 10s short circuit capability. square rbsoa. ultrasoft diode reverse recovery characteristics. positive vce (on) temperature coefficient. benefits www.irf.com 1 benchmark efficiency for motor control. rugged transient performance. low emi. excellent current sharing in parallel operation. IRGIB6B60KD e g n-channel c v ces = 600v i c = 6.0a, t c =90c t sc > 10s, t j =175c v ce(on) typ. = 1.8v to-220 full-pak absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 11 i c @ t c = 100c continuous collector current 7.0 a i cm pulse collector current (ref.fig.c.t.5) 22 i lm clamped inductive load current 22 i f @ t c = 25c diode continuous forward current 9.0 i f @ t c = 100c diode continuous forward current 6.0 i fm diode maximum forward current 18 v isol rms isolation voltage, terminal to case, t = 1 min 2500 v v ge gate-to-emitter voltage 20 p d @ t c = 25c maximum power dissipation 38 w p d @ t c = 100c maximum power dissipation 19 t j operating junction and -55 to +175 t stg storage temperature range c soldering temperature for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbf.in (1.1n.m) thermal / mechanical characteristics parameter min. typ. max. units r jc junction-to-case- igbt ??? ??? 3.9 r jc junction-to-case- diode ??? ??? 6.0 c/w r cs case-to-sink, flat, greased surface ??? 0.50 ??? r ja junction-to-ambient, typical socket mount ??? ??? 62 wt weight ??? 2.0 ??? g pd-94427d
IRGIB6B60KD 2 www.irf.com vcc =80% (v ces ), v ge = 20v, l =100h, r g = 50 ?. energy losses include "tail" and diode reverse recovery. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions ref.fig. v (br)ces collector-to-emitter breakdown voltage 600 ? ? v v ge = 0v, i c = 500a ? v (br)ces / ? t j temperature coeff. of breakdown volta g e ?0.30?v/c v ge = 0v, i c = 1ma (25c-150c) v ce(on) collector-to-emitter voltage 1.50 1.80 2.20 v i c = 5a, v ge = 15v, t j = 25c 5,6,7 ?2.202.50 i c = 5a, v ge = 15v, t j = 150c ?2.302.60 i c = 5a, v ge = 15v, t j = 175c 9,10,11 v ge(th) gate threshold voltage 3.5 4.5 5.5 v v ce = v ge , i c = 250a 9,10,11 ? v ge(th) / ? t j threshold voltage temp. coefficient ? -10 ? mv/ c v ce = v ge , i c = 1ma (25c-150c) 12 gfe forward transconductance ? 3.0 ? s v ce = 50v, i c = 5.0a, pw = 80s i ces zero gate voltage collector current ? 1.0 150 a v ge = 0v, v ce = 600v ?200500 v ge = 0v, v ce = 600v, t j = 150c ? 720 1100 v ge = 0v, v ce = 600v, t j = 175c v fm diode forward voltage drop ? 1.25 1.45 v i f = 5.0a, v ge = 0v 8 ?1.201.40 i f = 5.0a, v ge = 0v, t j = 150c ?1.151.35 i f = 5.0a, v ge = 0v, t j = 175c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v, v ce = 0v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions ref.fig. q g total gate charge (turn-on) ? 18.2 27.3 i c = 5.0a 23 q ge gate-to-emitter charge (turn-on) ? 1.9 2.85 nc v cc = 400v ct1 q gc gate-to-collector charge (turn-on) ? 9.2 13.8 v ge = 15v e on turn-on switching loss ? 110 210 i c = 5.0a, v cc = 400v ct4 e off turn-off switching loss ? 135 245 j v ge = 15v, r g = 100 ? , l = 1.4mh e tot total switching loss ? 245 455 ls= 150nh, t j = 25c t d(on) turn-on delay time ? 25 34 i c = 5.0a, v cc = 400v t r rise time ? 17 26 ns v ge = 15v, r g = 100 ? , l = 1.4mh ct4 t d(off) turn-off delay time ? 215 230 ls= 150nh, t j = 25c t f fall time ? 13.2 22 e on turn-on switching loss ? 150 260 i c = 5.0a, v cc = 400v ct4 e off turn-off switching loss ? 190 300 j v ge = 15v, r g = 100 ? , l = 1.4mh 13,15 e tot total switching loss ? 340 560 ls= 150nh, t j = 150c wf1,wf2 t d(on) turn-on delay time ? 28 37 i c = 5.0a, v cc = 400v 14,16 t r rise time ? 17 26 ns v ge = 15v, r g = 100 ? , l = 1.4mh ct4 t d(off) turn-off delay time ? 240 255 ls= 150nh, t j = 150c wf1 t f fall time ? 18 27 wf2 l e internal emitter inductance ? 7.5 ? nh measured 5 mm from package c ies input capacitance ? 290 435 v ge = 0v c oes output capacitance ? 34 51 pf v cc = 30v 22 c res reverse transfer capacitance ? 10 15 f = 1.0mhz rbsoa reverse bias safe operating area full square t j = 150c, i c = 18a, vp = 600v 4 v cc =500v,v ge = +15v to 0v,r g = 100 ? ct2 scsoa short circuit safe operating area 10 ? ? s t j = 150c, vp = 600v, r g = 100 ? ct3 v cc =360v,v ge = +15v to 0v wf4 i sc (peak) peak short circuit collector current ? 50 ? a wf4 e rec reverse recovery energy of the diode ? 90 175 j t j = 150c 17,18,19 t rr diode reverse recovery time ? 70 91 ns v cc = 400v, i f = 5.0a, l = 1.4mh 20,21 i rr peak reverse recovery current ? 10 13 a v ge = 15v, r g = 100 ?, ls= 150nh ct4,wf3 q rr diode reverse recovery charge ? 350 455 nc di/dt = 400a/s
IRGIB6B60KD www.irf.com 3 fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 3 - forward soa t c = 25c; t j 175c fig. 4 - reverse bias soa t j = 175c; v ge =15v 0 20 40 60 80 100 120 140 160 180 t c (c) 0 2 4 6 8 10 12 i c ( a ) 10 100 1000 v ce (v) 1 10 100 i c a ) 1 10 100 1000 10000 v ce (v) 0.01 0.1 1 10 100 i c ( a ) 10 s 100 s 1ms dc 0 20 40 60 80 100 120 140 160 180 t c (c) 0 5 10 15 20 25 30 35 40 p t o t ( w )
IRGIB6B60KD 4 www.irf.com fig. 6 - typ. igbt output characteristics t j = 25c; tp = 80s fig. 5 - typ. igbt output characteristics t j = -40c; tp = 80s fig. 8 - typ. diode forward characteristics tp = 80s fig. 7 - typ. igbt output characteristics t j = 150c; tp = 80s 0.0 0.5 1.0 1.5 2.0 v f (v) 0 5 10 15 20 25 30 i f ( a ) -40c 25c 150c 0246 v ce (v) 0 2 4 6 8 10 12 14 16 18 20 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0246 v ce (v) 0 2 4 6 8 10 12 14 16 18 20 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0246 v ce (v) 0 2 4 6 8 10 12 14 16 18 20 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v
IRGIB6B60KD www.irf.com 5 fig. 10 - typical v ce vs. v ge t j = 25c fig. 9 - typical v ce vs. v ge t j = -40c fig. 11 - typical v ce vs. v ge t j = 150c fig. 12 - typ. transfer characteristics v ce = 50v; tp = 10s 0 5 10 15 20 v ge (v ) 0 5 10 15 20 25 30 35 40 i c e ( a ) t j = 25c t j = 150c t j = 150c t j = 25c 5101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 3.0a i ce = 5.0a i ce = 10a 5101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 3.0a i ce = 5.0a i ce = 10a 5101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 3.0a i ce = 5.0a i ce = 10a
IRGIB6B60KD 6 www.irf.com fig. 14 - typ. switching time vs. i c t j = 150c; l=1.4mh; v ce = 400v r g = 100 ? ; v ge = 15v fig. 13 - typ. energy loss vs. i c t j = 150c; l=1.4mh; v ce = 400v r g = 100 ? ; v ge = 15v fig. 16 - typ. switching time vs. r g t j = 150c; l=1.4mh; v ce = 400v i ce = 5.0a; v ge = 15v fig. 15 - typ. energy loss vs. r g t j = 150c; l=1.4mh; v ce = 400v i ce = 5.0a; v ge = 15v 0 5 10 15 20 i c (a ) 0 100 200 300 400 500 600 700 e n e r g y ( j ) e off e on 0 50 100 150 200 r g ( ? ) 0 50 100 150 200 250 e n e r g y ( j ) e on e off 0 5 10 15 20 i c (a) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 50 100 150 200 r g ( ? ) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on
IRGIB6B60KD www.irf.com 7 fig. 17 - typical diode i rr vs. i f t j = 150c fig. 18 - typical diode i rr vs. r g t j = 150c; i f = 5.0a fig. 20 - typical diode q rr v cc = 400v; v ge = 15v;t j = 150c fig. 19 - typical diode i rr vs. di f /dt v cc = 400v; v ge = 15v; i ce = 5.0a; t j = 150c 0 5 10 15 20 i f (a) 0 5 10 15 20 25 i r r ( a ) r g = 150 ? r g = 22 ? r g = 47 ? r g = 100 ? 0 50 100 150 200 r g ( ?) 0 2 4 6 8 10 12 14 16 18 20 i r r ( a ) 0 200 400 600 800 1000 di f /dt (a/s) 0 2 4 6 8 10 12 14 16 18 20 i r r ( a ) 0 200 400 600 800 1000 di f /dt (a/s) 0 200 400 600 800 1000 1200 q r r ( n c ) 22 ? 47 ? 100 ? 150 ? 10a 5.0a 3.0a
IRGIB6B60KD 8 www.irf.com fig. 21 - typical diode e rr vs. i f t j = 150c fig. 23 - typical gate charge vs. v ge i ce = 5.0a; l = 600h fig. 22 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz 1 10 100 v ce (v ) 1 10 100 1000 c a p a c i t a n c e ( p f ) cies coes cres 0 5 10 15 20 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e ( v ) 300v 400v 0 5 10 15 i f (a) 50 100 150 200 250 300 e n e r g y ( j ) 22 ? 150 ? 47 ? 100 ?
IRGIB6B60KD www.irf.com 9 fig 25. maximum transient thermal impedance, junction-to-case (diode) fig 24. maximum transient thermal impedance, junction-to-case (igbt) 1e-006 1e-005 0. 0001 0. 001 0. 01 0. 1 1 10 100 t 1 , rectangular pulse duration (sec) 0. 001 0.01 0. 1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.01 0.02 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 1e-006 1e-005 0. 0001 0.001 0. 01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.001 0.01 0. 1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.01 0.02 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 2.530 0.001 1.354 0.068689 2.114 2.758 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri ri (c/w) i (sec) 1.157 0.000607 1.134 0.107781 1.608 1.9249 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri
IRGIB6B60KD 10 www.irf.com fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit 1k vcc dut 0 l fig.c.t.3 - s.c.soa circuit fig.c.t.4 - switching loss circuit fig.c.t.5 - resistive load circuit l rg vcc diode clamp / dut dut / driver - 5v rg vcc dut r = v cc i cm l rg 80 v dut 480v + - dc driver dut 360v
IRGIB6B60KD www.irf.com 11 fig. wf3- typ. diode recovery waveform @ t j = 150c using fig. ct.4 fig. wf4- typ. s.c waveform @ t j = 150c using fig. ct.3 fig. wf1- typ. turn-off loss waveform @ t j = 150c using fig. ct.4 fig. wf2- typ. turn-on loss waveform @ t j = 150c using fig. ct.4 -450 -400 -350 -300 -250 -200 -150 -100 -50 0 50 -0.06 0.04 0.14 0.24 time (s) v f (v) -12 -10 -8 -6 -4 -2 0 2 4 6 8 i f (a) pea k i rr t rr q rr 10% pe ak irr -50 0 50 100 150 200 250 300 350 400 450 -0.20 0.30 0.80 time(s) v ce (v) -1 0 1 2 3 4 5 6 7 8 9 i ce (a) 90% i ce 5% v ce 5% i ce eoff loss tf -100 0 100 200 300 400 500 16.00 16.10 16.20 16.30 16.40 time (s) v ce (v) -5 0 5 10 15 20 25 i ce (a) test current 90% test current 5% v ce 10% test current t r eon loss 0 100 200 300 400 500 -5.00 0.00 5.00 10.00 15.00 time (s) v ce (v) 0 10 20 30 40 50 i ce (a) v ce i ce
IRGIB6B60KD 12 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 4/04

package outline dimensions are shown in millimeters (inches) lead assignments 1 - gate 2 - drain 3 - source notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982 2 controlling dimension: inch. d c a b minimum creepage distance between a-b-c-d = 4.80 (.189) 3x 2.85 (.112) 2.65 (.104) 2.80 (.110) 2.60 (.102) 4.80 (.189) 4.60 (.181) 7.10 (.280) 6.70 (.263) 3.40 (.133) 3.10 (.123) ? - a - 3.70 (.145) 3.20 (.126) 1.15 (.045) min. 3.30 (.130) 3.10 (.122) - b - 0.90 (.035) 0.70 (.028) 3x 0.25 (.010) m a m b 2.54 (.100) 2x 3x 13.70 (.540) 13.50 (.530) 16.00 (.630) 15.80 (.622) 1 2 3 10.60 (.417) 10.40 (.409) 1.40 (.055) 1.05 (.042) 0.48 (.019) 0.44 (.017) to-220 full-pak package is not recommended for surface mount application wit h as s e mb ly e xample : t his is an irf i840g lot code 3432 as s e mb le d on ww 24 1999 in t h e as s e mb l y l ine "k " part number lot code assembly int e r nat ional rectifier logo 34 32 924k ir f i840g dat e code ye ar 9 = 1999 we e k 24 line k note: "p" in assembly line position indicates "lead-free"
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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